Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V GS = 10 thr u 5 V
1.5
24
1 8
12
4 V
1.2
0.9
0.6
T C = 125 °C
6
0
0.3
0.0
25 °C
- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
0.07
0.06
0.05
0.04
V GS - Drain-to-So u rce V oltage ( V )
Output Characteristics (Ch 2)
V GS = 4.5 V
650
520
390
260
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics (Ch 2)
C iss
0.03
0.02
V GS = 10 V
130
0
C rss
C oss
0
6
12
1 8
24
30
0
6
12
1 8
24
30
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current Gate Voltage (Ch 2)
10
1. 8
V DS - Drain-to-So u rce V oltage ( V )
Capacitance (Ch 2)
I D = 5 A
V DS = 10 V
I D = 4.5 A
V GS = 10 V
8
1.5
6
V DS = 15 V
4
1.2
V GS = 4.5 V
2
0
V DS = 20 V
0.9
0.6
0
2
4
6
8
10
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
8
Q g - Total Gate Charge (nC)
Gate Charge (Ch 2)
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature (Ch 2)
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
相关PDF资料
SI4973DY-T1-GE3 MOSFET 2P-CH 30V 5.8A 8SOIC
SI5040-D-GM IC TXRX XFP 10GBPS 32LGA
SI5402DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8
SI5432DC-T1-GE3 MOSFET N-CH 20V 6A 1206-8
SI5440DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
SI5441DC-T1-GE3 MOSFET P-CH D-S 20V 1206-8
SI5443DC-T1-GE3 MOSFET P-CH D-S 20V 1206-8
相关代理商/技术参数
SI4973DY 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N
SI4973DY-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
SI4973DY-T1-E3 功能描述:MOSFET P-CHANNEL 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4973DY-T1-GE3 功能描述:MOSFET 30V 7.6A 2.0W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4974DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4980DY 功能描述:MOSFET 80V 3.7A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4980DY-E3 功能描述:MOSFET 80V 3.7A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4980DY-T1 功能描述:MOSFET 80V 3.7A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube